收藏本站
Si4420
RX FIFO BUFFERED DATA READ
In this operating mode, incoming data are clocked into a 16 bit FIFO buffer. The receiver starts to fill up the FIFO when the Valid Data
Indicator (VDI) bit and the synchron pattern recognition circuit indicates potentially real incoming data. This prevents the FIFO from being
filled with noise and overloading the external microcontroller.
Polling Mode:
The nFFS signal selects the buffer directly and its content can be clocked out through pin SDO by SCK. Set the FIFO IT level to 1. In this case,
as long as FFIT indicates received bits in the FIFO, the controller may continue to take the bits away. When FFIT goes low, no more bits need
to be taken. An SPI read command is also available.
Interrupt Controlled Mode:
The user can define the FIFO level (the number of received bits), which will generate the nFFIT when exceeded. The status bits report the
changed FIFO status in this case.
FIFO Read Example with FFIT Polling
nSEL
0
1
2
3
4
SCK
nFFS
FIFO read out
SDO
FIFO OUT
FO+1
FO+2
FO+3
FO+4
FFIT
During FIFO access f SCK cannot be higher than f ref /4, where f ref is the crystal oscillator frequency.
24
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
SI4420DYTR MOSFET N-CH 30V 12.5A 8-SOIC
SI4421DY-T1-GE3 MOSFET P-CH D-S 20V 8-SOIC
SI4427BDY-T1-GE3 MOSFET P-CH 30V 9.7A 8SOIC
SI4430BDY-T1-GE3 MOSFET N-CH 30V 14A 8-SOIC
SI4431BDY-T1-GE3 MOSFET P-CH 30V 5.7A 8SOIC
SI4435DDY-T1-E3 MOSFET P-CH 30V 11.4A 8SOIC
SI4435DY MOSFET P-CH 30V 8.8A 8-SOIC
SI4435DY MOSFET P-CH 30V 8A 8-SOIC
相关代理商/技术参数
SI4420-D1-FTR 功能描述:射频发射器 Transceiver EZRadio RoHS:否 制造商:Micrel 类型:ASK Transmitter 封装 / 箱体:SOT-23-6 工作频率:300 MHz to 450 MHz 封装:Reel
SI4420DY 功能描述:MOSFET 30V 400a N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4420DY,518 功能描述:MOSFET TRENCH<=30 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4420DY 制造商:Vishay Siliconix 功能描述:MOSFET N SO-8
SI4420DY-E3 功能描述:MOSFET 30V 12.5A 2.5W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4420DYHR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 12.5A 8-Pin SOIC 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 30V 12.5A 8SOIC - Rail/Tube
SI4420DYPBF 功能描述:MOSFET 30V 1 N-CH HEXFET 9mOhms 52nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4420DYPBF 制造商:International Rectifier 功能描述:TRANSISTOR 制造商:International Rectifier 功能描述:N CHANNEL MOSFET, 30V, 12.5A, SOIC